Engineering of impact ionization characteristics in In(0.53)Ga(0.47)As/Al(0.48)In(0.52)As superlattice avalanche photodiodes on InP substrate

We report on engineering impact ionization characteristics of In(0.53)Ga(0.47)As/Al(0.48)In(0.52)As superlattice avalanche photodiodes (InGaAs/AlInAs SL APDs) on InP substrate to design and demonstrate an APD with low k-value. We design InGaAs/AlInAs SL APDs with three different SL periods (4 ML, 6...

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Detalles Bibliográficos
Autores principales: Lee, S., Winslow, M., Grein, C. H., Kodati, S. H., Jones, A. H., Fink, D. R., Das, P, Hayat, M. M., Ronningen, T. J., Campbell, J. C., Krishna, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7542422/
https://www.ncbi.nlm.nih.gov/pubmed/33028858
http://dx.doi.org/10.1038/s41598-020-73810-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7542422/
https://www.ncbi.nlm.nih.gov/pubmed/33028858
http://dx.doi.org/10.1038/s41598-020-73810-w

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