Study of the heavily p-type doping of cubic GaN with Mg

We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance films which can be used in bipolar devices. We simulated the Mg-doped G...

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Detalles Bibliográficos
Autores principales: Hernández-Gutiérrez, C. A., Casallas-Moreno, Y. L., Rangel-Kuoppa, Victor-Tapio, Cardona, Dagoberto, Hu, Yaoqiao, Kudriatsev, Yuri, Zambrano-Serrano, M. A., Gallardo-Hernandez, S., Lopez-Lopez, M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7544912/
https://www.ncbi.nlm.nih.gov/pubmed/33033291
http://dx.doi.org/10.1038/s41598-020-73872-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7544912/
https://www.ncbi.nlm.nih.gov/pubmed/33033291
http://dx.doi.org/10.1038/s41598-020-73872-w

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