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Study of the heavily p-type doping of cubic GaN with Mg

We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance films which can be used in bipolar devices. We simulated the Mg-doped G...

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Detalles Bibliográficos
Autores principales:	Hernández-Gutiérrez, C. A., Casallas-Moreno, Y. L., Rangel-Kuoppa, Victor-Tapio, Cardona, Dagoberto, Hu, Yaoqiao, Kudriatsev, Yuri, Zambrano-Serrano, M. A., Gallardo-Hernandez, S., Lopez-Lopez, M.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7544912/ https://www.ncbi.nlm.nih.gov/pubmed/33033291 http://dx.doi.org/10.1038/s41598-020-73872-w

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