Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices”

Detalles Bibliográficos
Autores principales: Sharma, Indu, Papanai, Girija Shankar, Paul, Sharon Jyotika, Gupta, Bipin Kumar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7558029/
https://www.ncbi.nlm.nih.gov/pubmed/33073158
http://dx.doi.org/10.1021/acsomega.0c04479

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7558029/
https://www.ncbi.nlm.nih.gov/pubmed/33073158
http://dx.doi.org/10.1021/acsomega.0c04479

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