Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors

InSnZnO thin-film transistors (ITZO TFTs), having high carrier mobility, guarantee the benefits of potential applications in the next generation of super-high-definition flat-panel displays. However, the impact of photo-excitation on the leakage current and negative bias stress (NBIS) of ITZO TFTs m...

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Detalles Bibliográficos
Autores principales: Wang, Dapeng, Furuta, Mamoru, Tomai, Shigekazu, Yano, Koki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7558084/
https://www.ncbi.nlm.nih.gov/pubmed/32916832
http://dx.doi.org/10.3390/nano10091782

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7558084/
https://www.ncbi.nlm.nih.gov/pubmed/32916832
http://dx.doi.org/10.3390/nano10091782

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