Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

The utilization of sputtered AlN nucleation layers (NLs) and patterned sapphire substrates (PSSs) could greatly improve GaN crystal quality. However, the growth mechanism of GaN on PSSs with sputtered AlN NLs has not been thoroughly understood. In this paper, we deposited AlON by sputtering AlN with...

Descripción completa

Detalles Bibliográficos
Autores principales: Gao, Yuan, Xu, Shengrui, Peng, Ruoshi, Tao, Hongchang, Zhang, Jincheng, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7558100/
https://www.ncbi.nlm.nih.gov/pubmed/32899535
http://dx.doi.org/10.3390/ma13183933

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7558100/
https://www.ncbi.nlm.nih.gov/pubmed/32899535
http://dx.doi.org/10.3390/ma13183933

Ejemplares similares