Tunable Optical Properties of Amorphous-Like Ga(2)O(3) Thin Films Deposited by Electron-Beam Evaporation with Varying Oxygen Partial Pressures

Ga(2)O(3) thin films were fabricated by the electron-beam evaporation technique at a varying oxygen partial pressure from 0 to 2.0 × 10(−2) Pa. The effect of oxygen partial pressure on the crystalline structure and optical properties of the Ga(2)O(3) films was analyzed using sophisticated techniques...

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Detalles Bibliográficos
Autores principales: Li, Shijie, Yang, Chen, Zhang, Jin, Dong, Linpeng, Cai, Changlong, Liang, Haifeng, Liu, Weiguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7558287/
https://www.ncbi.nlm.nih.gov/pubmed/32899985
http://dx.doi.org/10.3390/nano10091760

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7558287/
https://www.ncbi.nlm.nih.gov/pubmed/32899985
http://dx.doi.org/10.3390/nano10091760

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