The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles

Graphene-based van der Waals (vdW) heterojunction plays an important role in next-generation optoelectronics, nanoelectronics, and spintronics devices. The tunability of the Schottky barrier height (SBH) is beneficial for improving device performance, especially for the contact resistance. Herein, w...

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Detalles Bibliográficos
Autores principales: Liu, Xuefei, Zhang, Zhaocai, Lv, Bing, Ding, Zhao, Luo, Zijiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7558498/
https://www.ncbi.nlm.nih.gov/pubmed/32916951
http://dx.doi.org/10.3390/nano10091794

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7558498/
https://www.ncbi.nlm.nih.gov/pubmed/32916951
http://dx.doi.org/10.3390/nano10091794

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