Short-Term Memory Dynamics of TiN/Ti/TiO(2)/SiO(x)/Si Resistive Random Access Memory

In this study, we investigated the synaptic functions of TiN/Ti/TiO(2)/SiO(x)/Si resistive random access memory for a neuromorphic computing system that can act as a substitute for the von-Neumann computing architecture. To process the data efficiently, it is necessary to coordinate the information...

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Detalles Bibliográficos
Autores principales: Cho, Hyojong, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7559005/
https://www.ncbi.nlm.nih.gov/pubmed/32932656
http://dx.doi.org/10.3390/nano10091821

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7559005/
https://www.ncbi.nlm.nih.gov/pubmed/32932656
http://dx.doi.org/10.3390/nano10091821

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