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Short-Term Memory Dynamics of TiN/Ti/TiO(2)/SiO(x)/Si Resistive Random Access Memory
In this study, we investigated the synaptic functions of TiN/Ti/TiO(2)/SiO(x)/Si resistive random access memory for a neuromorphic computing system that can act as a substitute for the von-Neumann computing architecture. To process the data efficiently, it is necessary to coordinate the information...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7559005/ https://www.ncbi.nlm.nih.gov/pubmed/32932656 http://dx.doi.org/10.3390/nano10091821 |