Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode

Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in sim...

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Detalles Bibliográficos
Autores principales: Alimkhanuly, Batyrbek, Kim, Sanghoek, Kim, Lok-won, Lee, Seunghyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7559638/
https://www.ncbi.nlm.nih.gov/pubmed/32825304
http://dx.doi.org/10.3390/nano10091634

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7559638/
https://www.ncbi.nlm.nih.gov/pubmed/32825304
http://dx.doi.org/10.3390/nano10091634

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