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Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode
Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in sim...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7559638/ https://www.ncbi.nlm.nih.gov/pubmed/32825304 http://dx.doi.org/10.3390/nano10091634 |