Strained Si(0.2)Ge(0.8)/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

With the development of new designs and materials for nano-scale transistors, vertical Gate-All-Around Field Effect Transistors (vGAAFETs) with germanium as channel materials have emerged as excellent choices. The driving forces for this choice are the full control of the short channel effect and th...

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Detalles Bibliográficos
Autores principales: Xie, Lu, Zhu, Huilong, Zhang, Yongkui, Ai, Xuezheng, Wang, Guilei, Li, Junjie, Du, Anyan, Kong, Zhenzhen, Yin, Xiaogen, Li, Chen, Zhao, Liheng, Li, Yangyang, Jia, Kunpeng, Li, Ben, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7559900/
https://www.ncbi.nlm.nih.gov/pubmed/32872556
http://dx.doi.org/10.3390/nano10091715

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7559900/
https://www.ncbi.nlm.nih.gov/pubmed/32872556
http://dx.doi.org/10.3390/nano10091715

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