Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

We investigated the effects of various high-k gate dielectrics as well as microwave annealing (MWA) calcination and a postcalcination oxygen plasma treatment on the electrical properties and stability of electrospun indium gallium zinc oxide (IGZO)-nanofiber (NF)-based field-effect transistors (FETs...

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Detalles Bibliográficos
Autores principales: Cho, Seong-Kun, Cho, Won-Ju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7560152/
https://www.ncbi.nlm.nih.gov/pubmed/32927757
http://dx.doi.org/10.3390/nano10091804

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7560152/
https://www.ncbi.nlm.nih.gov/pubmed/32927757
http://dx.doi.org/10.3390/nano10091804

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