The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

GaN epitaxially grown on Si is a material for power electronics that intrinsically shows a high density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and Defect Selective Etching that even for materials with similar total dislocation densities substantially different subsets...

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Detalles Bibliográficos
Autores principales: Besendörfer, Sven, Meissner, Elke, Medjdoub, Farid, Derluyn, Joff, Friedrich, Jochen, Erlbacher, Tobias
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7560755/
https://www.ncbi.nlm.nih.gov/pubmed/33057086
http://dx.doi.org/10.1038/s41598-020-73977-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7560755/
https://www.ncbi.nlm.nih.gov/pubmed/33057086
http://dx.doi.org/10.1038/s41598-020-73977-2

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