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The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
GaN epitaxially grown on Si is a material for power electronics that intrinsically shows a high density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and Defect Selective Etching that even for materials with similar total dislocation densities substantially different subsets...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7560755/ https://www.ncbi.nlm.nih.gov/pubmed/33057086 http://dx.doi.org/10.1038/s41598-020-73977-2 |