Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Vacancy-type defects in Mg-implanted GaN were probed by using a monoenergetic positron beam. Mg ions were implanted into GaN to obtain 0.3-μm-deep box profiles with Mg concentrations of 1 × 10(19) cm(−3). The major defect species in an as-implanted sample was determined to be Ga-vacancy related defe...

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Detalles Bibliográficos
Autores principales: Uedono, Akira, Sakurai, Hideki, Narita, Tetsuo, Sierakowski, Kacper, Bockowski, Michal, Suda, Jun, Ishibashi, Shoji, Chichibu, Shigefusa F., Kachi, Tetsu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7562725/
https://www.ncbi.nlm.nih.gov/pubmed/33060712
http://dx.doi.org/10.1038/s41598-020-74362-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7562725/
https://www.ncbi.nlm.nih.gov/pubmed/33060712
http://dx.doi.org/10.1038/s41598-020-74362-9

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