The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers

III-nitride compound semiconductors are breakthrough materials regarding device applications. However, their heterostructures suffer from very high threading dislocation (TD) densities that impair several aspects of their performance. The physical mechanisms leading to TD nucleation in these materia...

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Detalles Bibliográficos
Autores principales: Smalc-Koziorοwska, J., Moneta, J., Chatzopoulou, P., Vasileiadis, I. G., Bazioti, C., Prytz, Ø., Belabbas, I., Komninou, Ph., Dimitrakopulos, G. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7566635/
https://www.ncbi.nlm.nih.gov/pubmed/33060651
http://dx.doi.org/10.1038/s41598-020-74030-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7566635/
https://www.ncbi.nlm.nih.gov/pubmed/33060651
http://dx.doi.org/10.1038/s41598-020-74030-y

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