Broadband optical ultrafast reflectivity of Si, Ge and GaAs

Ultrafast optical reflectivity measurements of silicon, germanium, and gallium arsenide have been carried out using an advanced set-up providing intense subpicosecond pulses (35 fs FWHM, [Formula: see text] = 400 nm) as a pump and broadband 340–780 nm ultrafast pulses as a white supercontinuum probe...

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Detalles Bibliográficos
Autores principales: Di Cicco, A., Polzoni, G., Gunnella, R., Trapananti, A., Minicucci, M., Rezvani, S. J., Catone, D., Di Mario, L., Pelli Cresi, J. S., Turchini, S., Martelli, F.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7567120/
https://www.ncbi.nlm.nih.gov/pubmed/33060665
http://dx.doi.org/10.1038/s41598-020-74068-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7567120/
https://www.ncbi.nlm.nih.gov/pubmed/33060665
http://dx.doi.org/10.1038/s41598-020-74068-y

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