A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced. Through these methods, the DF-TFET with high on-state current, switching ratio of...

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Detalles Bibliográficos
Autores principales: Chen, Shupeng, Wang, Shulong, Liu, Hongxia, Han, Tao, Xie, Haiwu, Chong, Chen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7568735/
https://www.ncbi.nlm.nih.gov/pubmed/33068207
http://dx.doi.org/10.1186/s11671-020-03429-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7568735/
https://www.ncbi.nlm.nih.gov/pubmed/33068207
http://dx.doi.org/10.1186/s11671-020-03429-3

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