Avalanche Transients of Thick 0.35 µm CMOS Single-Photon Avalanche Diodes

Two types of single-photon avalanche diodes (SPADs) with different diameters are investigated regarding their avalanche behavior. SPAD type A was designed in standard 0.35-µm complementary metal-oxide-semiconductor (CMOS) including a 12-µm thick p(-) epi-layer with diameters of 50, 100, 200, and 400...

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Detalles Bibliográficos
Autores principales: Goll, Bernhard, Steindl, Bernhard, Zimmermann, Horst
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7569859/
https://www.ncbi.nlm.nih.gov/pubmed/32961756
http://dx.doi.org/10.3390/mi11090869

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7569859/
https://www.ncbi.nlm.nih.gov/pubmed/32961756
http://dx.doi.org/10.3390/mi11090869

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