Giant Piezoresistive Effect and Strong Bandgap Tunability in Ultrathin InSe upon Biaxial Strain

The ultrathin nature and dangling bonds free surface of 2D semiconductors allow for significant modifications of their bandgap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched, finding, a strong bandgap tunability upon strain. The applied biaxial strain is co...

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Detalles Bibliográficos
Autores principales: Zhao, Qinghua, Wang, Tao, Frisenda, Riccardo, Castellanos‐Gomez, Andres
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2020
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7578899/
https://www.ncbi.nlm.nih.gov/pubmed/33101864
http://dx.doi.org/10.1002/advs.202001645

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7578899/
https://www.ncbi.nlm.nih.gov/pubmed/33101864
http://dx.doi.org/10.1002/advs.202001645

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