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Giant Piezoresistive Effect and Strong Bandgap Tunability in Ultrathin InSe upon Biaxial Strain
The ultrathin nature and dangling bonds free surface of 2D semiconductors allow for significant modifications of their bandgap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched, finding, a strong bandgap tunability upon strain. The applied biaxial strain is co...
Autores principales: | Zhao, Qinghua, Wang, Tao, Frisenda, Riccardo, Castellanos‐Gomez, Andres |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7578899/ https://www.ncbi.nlm.nih.gov/pubmed/33101864 http://dx.doi.org/10.1002/advs.202001645 |
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