Ultrafast Carrier Relaxation Dynamics in Quantum Confined Non-Isotropic Silicon Nanostructures Synthesized by an Inductively Coupled Plasma Process

To exploit the optoelectronic properties of silicon nanostructures (SiNS) in real devices, it is fundamental to study the ultrafast processes involving the photogenerated charges separation, migration and lifetime after the optical excitation. Ultrafast time-resolved optical measurements provide suc...

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Detalles Bibliográficos
Autores principales: Ponzoni, Stefano, Freddi, Sonia, Agati, Marta, Le Borgne, Vincent, Boninelli, Simona, Dolbec, Richard, El Khakani, My Ali, Pagliara, Stefania, Castrucci, Paola
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7579142/
https://www.ncbi.nlm.nih.gov/pubmed/32992700
http://dx.doi.org/10.3390/ma13194267

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7579142/
https://www.ncbi.nlm.nih.gov/pubmed/32992700
http://dx.doi.org/10.3390/ma13194267

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