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III-Nitrides Resonant Cavity Photodetector Devices
III-nitride resonant cavity-enhanced Schottky barrier photodetectors were fabricated on 2 µm thick GaN templates by radio frequency plasma-assisted molecular beam epitaxy. The optical cavity was formed by a bottom distributed Bragg reflector based on 10 periods of Al(0.3)Ga(0.7)N/GaN, an Au-based Sc...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7579302/ https://www.ncbi.nlm.nih.gov/pubmed/33027953 http://dx.doi.org/10.3390/ma13194428 |