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III-Nitrides Resonant Cavity Photodetector Devices

III-nitride resonant cavity-enhanced Schottky barrier photodetectors were fabricated on 2 µm thick GaN templates by radio frequency plasma-assisted molecular beam epitaxy. The optical cavity was formed by a bottom distributed Bragg reflector based on 10 periods of Al(0.3)Ga(0.7)N/GaN, an Au-based Sc...

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Detalles Bibliográficos
Autores principales: Fernández, Susana, Naranjo, Fernando B., Sánchez-García, Miguel Ángel, Calleja, Enrique
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7579302/
https://www.ncbi.nlm.nih.gov/pubmed/33027953
http://dx.doi.org/10.3390/ma13194428