High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage applications. To this aim, we compared two structures, one based on a step-graded (SG) buffer (reference structure), and another based on a superlatt...

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Detalles Bibliográficos
Autores principales: Tajalli, Alaleh, Meneghini, Matteo, Besendörfer, Sven, Kabouche, Riad, Abid, Idriss, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7579583/
https://www.ncbi.nlm.nih.gov/pubmed/32992721
http://dx.doi.org/10.3390/ma13194271

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7579583/
https://www.ncbi.nlm.nih.gov/pubmed/32992721
http://dx.doi.org/10.3390/ma13194271

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