Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes

The effects of rapid thermal annealing (RTA) on Schottky barrier diodes (SBDs) made from oxygenated aluminum nitride (AlN) thin films deposited on a silicon carbide (SiC) substrate using radio frequency sputtering were investigated. The annealed SBD devices exhibited a 10x increase in the on/off cur...

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Detalles Bibliográficos
Autores principales: Kim, Dong-Hyeon, Min, Seong-Ji, Oh, Jong-Min, Koo, Sang-Mo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7579660/
https://www.ncbi.nlm.nih.gov/pubmed/33003505
http://dx.doi.org/10.3390/ma13194335

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7579660/
https://www.ncbi.nlm.nih.gov/pubmed/33003505
http://dx.doi.org/10.3390/ma13194335

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