Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects rela...

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Detalles Bibliográficos
Autores principales: Roshko, Alexana, Brubaker, Matt, Blanchard, Paul, Harvey, Todd, Bertness, Kris A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7580013/
https://www.ncbi.nlm.nih.gov/pubmed/33101720

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7580013/
https://www.ncbi.nlm.nih.gov/pubmed/33101720

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