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Forming a Photoluminescent Layer on Another Surface in the Dark through Lasering of N-Type Silicon in an Electrolyte
[Image: see text] Photoetching of n-type silicon induces a photoluminescent (PL) layer containing nanocrystals on the irradiated surface, usually through band gap absorption (wavelength <1100 nm). Here, we demonstrate the formation of a PL layer restricted to the backside surface, not the irradia...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7581246/ https://www.ncbi.nlm.nih.gov/pubmed/33110977 http://dx.doi.org/10.1021/acsomega.0c03165 |