Improved Current Density and Contact Resistance in Bilayer MoSe(2) Field Effect Transistors by AlO(x) Capping

[Image: see text] Atomically thin semiconductors are of interest for future electronics applications, and much attention has been given to monolayer (1L) sulfides, such as MoS(2), grown by chemical vapor deposition (CVD). However, reports on the electrical properties of CVD-grown selenides, and MoSe...

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Detalles Bibliográficos
Autores principales: Somvanshi, Divya, Ber, Emanuel, Bailey, Connor S., Pop, Eric, Yalon, Eilam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7588022/
https://www.ncbi.nlm.nih.gov/pubmed/32678569
http://dx.doi.org/10.1021/acsami.0c09541

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7588022/
https://www.ncbi.nlm.nih.gov/pubmed/32678569
http://dx.doi.org/10.1021/acsami.0c09541

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