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Improved Current Density and Contact Resistance in Bilayer MoSe(2) Field Effect Transistors by AlO(x) Capping
[Image: see text] Atomically thin semiconductors are of interest for future electronics applications, and much attention has been given to monolayer (1L) sulfides, such as MoS(2), grown by chemical vapor deposition (CVD). However, reports on the electrical properties of CVD-grown selenides, and MoSe...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American
Chemical Society
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7588022/ https://www.ncbi.nlm.nih.gov/pubmed/32678569 http://dx.doi.org/10.1021/acsami.0c09541 |