Reduction of charge offset drift using plasma oxidized aluminum in SETs

Aluminum oxide ([Formula: see text] )-based single-electron transistors (SETs) fabricated in ultra-high vacuum (UHV) chambers using in situ plasma oxidation show excellent stabilities over more than a week, enabling applications as tunnel barriers, capacitor dielectrics or gate insulators in close p...

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Detalles Bibliográficos
Autores principales: Hong, Yanxue, Stein, Ryan, Stewart, M. D., Zimmerman, Neil M., Pomeroy, J. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7588434/
https://www.ncbi.nlm.nih.gov/pubmed/33106545
http://dx.doi.org/10.1038/s41598-020-75282-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7588434/
https://www.ncbi.nlm.nih.gov/pubmed/33106545
http://dx.doi.org/10.1038/s41598-020-75282-4

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