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Reduction of charge offset drift using plasma oxidized aluminum in SETs
Aluminum oxide ([Formula: see text] )-based single-electron transistors (SETs) fabricated in ultra-high vacuum (UHV) chambers using in situ plasma oxidation show excellent stabilities over more than a week, enabling applications as tunnel barriers, capacitor dielectrics or gate insulators in close p...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7588434/ https://www.ncbi.nlm.nih.gov/pubmed/33106545 http://dx.doi.org/10.1038/s41598-020-75282-4 |