Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO(2)/Al(2)O(3)/HfO(2) Based Memristor on ITO Electrode

Atomic layer deposited (ALD) HfO(2)/Al(2)O(3)/HfO(2) tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset...

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Detalles Bibliográficos
Autores principales: Mahata, Chandreswar, Kang, Myounggon, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7589730/
https://www.ncbi.nlm.nih.gov/pubmed/33092042
http://dx.doi.org/10.3390/nano10102069

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7589730/
https://www.ncbi.nlm.nih.gov/pubmed/33092042
http://dx.doi.org/10.3390/nano10102069

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