Atomic Layer Deposition of Al-Doped MoS(2): Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

[Image: see text] Extrinsically doped two-dimensional (2D) semiconductors are essential for the fabrication of high-performance nanoelectronics among many other applications. Herein, we present a facile synthesis method for Al-doped MoS(2) via plasma-enhanced atomic layer deposition (ALD), resulting...

Descripción completa

Detalles Bibliográficos
Autores principales: Vandalon, Vincent, Verheijen, Marcel A., Kessels, Wilhelmus M. M., Bol, Ageeth A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7590523/
https://www.ncbi.nlm.nih.gov/pubmed/33134882
http://dx.doi.org/10.1021/acsanm.0c02167

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7590523/
https://www.ncbi.nlm.nih.gov/pubmed/33134882
http://dx.doi.org/10.1021/acsanm.0c02167

Ejemplares similares