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Atomic Layer Deposition of Al-Doped MoS(2): Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

[Image: see text] Extrinsically doped two-dimensional (2D) semiconductors are essential for the fabrication of high-performance nanoelectronics among many other applications. Herein, we present a facile synthesis method for Al-doped MoS(2) via plasma-enhanced atomic layer deposition (ALD), resulting...

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Detalles Bibliográficos
Autores principales:	Vandalon, Vincent, Verheijen, Marcel A., Kessels, Wilhelmus M. M., Bol, Ageeth A.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2020
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7590523/ https://www.ncbi.nlm.nih.gov/pubmed/33134882 http://dx.doi.org/10.1021/acsanm.0c02167

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