Effect of Pulse Current and Pre-annealing on Thermal Extrusion of Cu in Through-Silicon via (TSV)

Thermal stress induced by annealing the Cu filling of through-silicon vias (TSVs) requires further investigation as it can inhibit the performance of semiconductor devices. This study reports the filling behavior of TSVs prepared using direct current and pulse current Cu electrodeposition with and w...

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Detalles Bibliográficos
Autores principales: Kim, Youjung, Jin, Sanghyun, Park, Kimoon, Lee, Jinhyun, Lim, Jae-Hong, Yoo, Bongyoung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7591792/
https://www.ncbi.nlm.nih.gov/pubmed/33195017
http://dx.doi.org/10.3389/fchem.2020.00771

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7591792/
https://www.ncbi.nlm.nih.gov/pubmed/33195017
http://dx.doi.org/10.3389/fchem.2020.00771

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