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Effect of Pulse Current and Pre-annealing on Thermal Extrusion of Cu in Through-Silicon via (TSV)
Thermal stress induced by annealing the Cu filling of through-silicon vias (TSVs) requires further investigation as it can inhibit the performance of semiconductor devices. This study reports the filling behavior of TSVs prepared using direct current and pulse current Cu electrodeposition with and w...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Frontiers Media S.A.
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7591792/ https://www.ncbi.nlm.nih.gov/pubmed/33195017 http://dx.doi.org/10.3389/fchem.2020.00771 |