Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond

We report herein high-resolution X-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). We define SCD (100) as the base plane. The results revealed that growth parameters such as temperature, growth time, and basal plane bending of the substrate all affe...

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Detalles Bibliográficos
Autores principales: Han, Xiaotong, Duan, Peng, Peng, Yan, Wang, Xiwei, Xie, Xuejian, Yu, Jinying, Hu, Xiufei, Wang, Dufu, Hu, Xiaobo, Xu, Xiangang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7599814/
https://www.ncbi.nlm.nih.gov/pubmed/33053712
http://dx.doi.org/10.3390/ma13204510

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7599814/
https://www.ncbi.nlm.nih.gov/pubmed/33053712
http://dx.doi.org/10.3390/ma13204510

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