Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal lattice structure in the composite ZnO thin films, X-r...

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Detalles Bibliográficos
Autores principales: Zhao, Xiaofeng, Song, Ping, Gai, Huiling, Li, Yi, Ai, Chunpeng, Wen, Dianzhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7599982/
https://www.ncbi.nlm.nih.gov/pubmed/32987957
http://dx.doi.org/10.3390/mi11100889

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7599982/
https://www.ncbi.nlm.nih.gov/pubmed/32987957
http://dx.doi.org/10.3390/mi11100889

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