Cathodoluminescence Spectroscopic Stress Analysis for Silicon Oxide Film and Its Damage Evaluation

We describe the stress analysis of silicon oxide (SiO(2)) thin film using cathodoluminescence (CL) spectroscopy and discuss its availability in this paper. To directly measure the CL spectra of the film under uniaxial tensile stresses, specially developed uniaxial tensile test equipment is used in a...

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Detalles Bibliográficos
Autores principales: Kammachi, Shingo, Goshima, Yoshiharu, Goami, Nobutaka, Yamashita, Naoaki, Kakinuma, Shigeru, Nishikata, Kentaro, Naka, Nobuyuki, Inoue, Shozo, Namazu, Takahiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7599996/
https://www.ncbi.nlm.nih.gov/pubmed/33050445
http://dx.doi.org/10.3390/ma13204490

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7599996/
https://www.ncbi.nlm.nih.gov/pubmed/33050445
http://dx.doi.org/10.3390/ma13204490

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