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A Parametric Study of the Effects of Critical Design Parameters on the Performance of Nanoscale Silicon Devices
The current electronics industry has used the aggressive miniaturization of solid-state devices to meet future technological demands. The downscaling of characteristic device dimensions into the sub-10 nm regime causes them to fall below the electron–phonon scattering length, thereby resulting in a...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7600378/ https://www.ncbi.nlm.nih.gov/pubmed/33050124 http://dx.doi.org/10.3390/nano10101987 |