Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μ(FE)), a lower subthreshold swing (SS), a positively shifted...

Descripción completa

Detalles Bibliográficos
Autores principales: Shin, Min-Gyu, Bae, Kang-Hwan, Jeong, Hwan-Seok, Kim, Dae-Hwan, Cha, Hyun-Seok, Kwon, Hyuck-In
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7601644/
https://www.ncbi.nlm.nih.gov/pubmed/33008074
http://dx.doi.org/10.3390/mi11100917

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7601644/
https://www.ncbi.nlm.nih.gov/pubmed/33008074
http://dx.doi.org/10.3390/mi11100917

Ejemplares similares