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Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μ(FE)), a lower subthreshold swing (SS), a positively shifted...

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Detalles Bibliográficos
Autores principales:	Shin, Min-Gyu, Bae, Kang-Hwan, Jeong, Hwan-Seok, Kim, Dae-Hwan, Cha, Hyun-Seok, Kwon, Hyuck-In
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Communication
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7601644/ https://www.ncbi.nlm.nih.gov/pubmed/33008074 http://dx.doi.org/10.3390/mi11100917

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