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Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al(2)O(3)/TiN Stack
In this work, we propose three types of resistive switching behaviors by controlling operation conditions. We confirmed well-known filamentary switching in Al(2)O(3)-based resistive switching memory using the conventional device working operation with a forming process. Here, filamentary switching c...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7603159/ https://www.ncbi.nlm.nih.gov/pubmed/33080978 http://dx.doi.org/10.3390/nano10102055 |