In Situ Study of Molecular Doping of Chlorine on MoS(2) Field Effect Transistor Device in Ultrahigh Vacuum Conditions

[Image: see text] We report a precise measurement of the sensor behavior of the field effect transistor (FET) formed with the MoS(2) channel when the channel part is exposed to Cl(2) gas. The gas exposure and the electrical measurement of the MoS(2) FET were executed with in situ ultrahigh-vacuum (U...

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Detalles Bibliográficos
Autores principales: Trung, Nguyen Tat, Hossain, Mohammad Ikram, Alam, Md Iftekharul, Ando, Atsushi, Kitakami, Osamu, Kikuchi, Nobuaki, Takaoka, Tsuyoshi, Sainoo, Yasuyuki, Arafune, Ryuichi, Komeda, Tadahiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7643195/
https://www.ncbi.nlm.nih.gov/pubmed/33163793
http://dx.doi.org/10.1021/acsomega.0c03741

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7643195/
https://www.ncbi.nlm.nih.gov/pubmed/33163793
http://dx.doi.org/10.1021/acsomega.0c03741

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