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In Situ Study of Molecular Doping of Chlorine on MoS(2) Field Effect Transistor Device in Ultrahigh Vacuum Conditions

[Image: see text] We report a precise measurement of the sensor behavior of the field effect transistor (FET) formed with the MoS(2) channel when the channel part is exposed to Cl(2) gas. The gas exposure and the electrical measurement of the MoS(2) FET were executed with in situ ultrahigh-vacuum (U...

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Autores principales: Trung, Nguyen Tat, Hossain, Mohammad Ikram, Alam, Md Iftekharul, Ando, Atsushi, Kitakami, Osamu, Kikuchi, Nobuaki, Takaoka, Tsuyoshi, Sainoo, Yasuyuki, Arafune, Ryuichi, Komeda, Tadahiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7643195/
https://www.ncbi.nlm.nih.gov/pubmed/33163793
http://dx.doi.org/10.1021/acsomega.0c03741
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author Trung, Nguyen Tat
Hossain, Mohammad Ikram
Alam, Md Iftekharul
Ando, Atsushi
Kitakami, Osamu
Kikuchi, Nobuaki
Takaoka, Tsuyoshi
Sainoo, Yasuyuki
Arafune, Ryuichi
Komeda, Tadahiro
author_facet Trung, Nguyen Tat
Hossain, Mohammad Ikram
Alam, Md Iftekharul
Ando, Atsushi
Kitakami, Osamu
Kikuchi, Nobuaki
Takaoka, Tsuyoshi
Sainoo, Yasuyuki
Arafune, Ryuichi
Komeda, Tadahiro
author_sort Trung, Nguyen Tat
collection PubMed
description [Image: see text] We report a precise measurement of the sensor behavior of the field effect transistor (FET) formed with the MoS(2) channel when the channel part is exposed to Cl(2) gas. The gas exposure and the electrical measurement of the MoS(2) FET were executed with in situ ultrahigh-vacuum (UHV) conditions in which the surface analysis techniques were equipped. This makes it possible to detect how much sensitivity the MoS(2) FET can provide and understand the surface properties. With the Cl(2) gas exposure to the channel, the plot of the drain current versus the gate voltage (I(d)–V(g) curve) shifts monotonically toward the positive direction of V(g), suggesting that the adsorbate acts as an electron acceptor. The I(d)–V(g) shifts are numerically estimated by measuring the onset of I(d) (threshold voltage, V(th)) and the mobility as a function of the dosing amounts of the Cl(2) gas. The behaviors of both the V(th) shift and the mobility with the Cl(2) dosing amount can be fitted with the Langmuir adsorption kinetics, which is typically seen in the uptake curve of molecule adsorption onto well-defined surfaces. This can be accounted for by a model where an impinging molecule occupies an empty site with a certain probability, and each adsorbate receives a certain amount of negative charge from the MoS(2) surface up to the monolayer coverage. The charge transfer makes the V(th) shifts. In addition, the mobility is reduced by the enhancement of the Coulomb scattering for the electron flow in the MoS(2) channel by the accumulated charge. From the thermal desorption spectroscopy (TDS) measurement and density functional theory (DFT) calculations, we concluded that the adsorbate that is responsible for the change of the FET property is the Cl atom that is dissociated from the Cl(2) molecule. The monotonic shift of V(th) with the coverage suggests that the MoS(2) device sensor has a good sensitivity to detect 10(–3) monolayers (ML) of adsorption corresponding to the ppb level sensor with an activation time of 1 s.
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spelling pubmed-76431952020-11-06 In Situ Study of Molecular Doping of Chlorine on MoS(2) Field Effect Transistor Device in Ultrahigh Vacuum Conditions Trung, Nguyen Tat Hossain, Mohammad Ikram Alam, Md Iftekharul Ando, Atsushi Kitakami, Osamu Kikuchi, Nobuaki Takaoka, Tsuyoshi Sainoo, Yasuyuki Arafune, Ryuichi Komeda, Tadahiro ACS Omega [Image: see text] We report a precise measurement of the sensor behavior of the field effect transistor (FET) formed with the MoS(2) channel when the channel part is exposed to Cl(2) gas. The gas exposure and the electrical measurement of the MoS(2) FET were executed with in situ ultrahigh-vacuum (UHV) conditions in which the surface analysis techniques were equipped. This makes it possible to detect how much sensitivity the MoS(2) FET can provide and understand the surface properties. With the Cl(2) gas exposure to the channel, the plot of the drain current versus the gate voltage (I(d)–V(g) curve) shifts monotonically toward the positive direction of V(g), suggesting that the adsorbate acts as an electron acceptor. The I(d)–V(g) shifts are numerically estimated by measuring the onset of I(d) (threshold voltage, V(th)) and the mobility as a function of the dosing amounts of the Cl(2) gas. The behaviors of both the V(th) shift and the mobility with the Cl(2) dosing amount can be fitted with the Langmuir adsorption kinetics, which is typically seen in the uptake curve of molecule adsorption onto well-defined surfaces. This can be accounted for by a model where an impinging molecule occupies an empty site with a certain probability, and each adsorbate receives a certain amount of negative charge from the MoS(2) surface up to the monolayer coverage. The charge transfer makes the V(th) shifts. In addition, the mobility is reduced by the enhancement of the Coulomb scattering for the electron flow in the MoS(2) channel by the accumulated charge. From the thermal desorption spectroscopy (TDS) measurement and density functional theory (DFT) calculations, we concluded that the adsorbate that is responsible for the change of the FET property is the Cl atom that is dissociated from the Cl(2) molecule. The monotonic shift of V(th) with the coverage suggests that the MoS(2) device sensor has a good sensitivity to detect 10(–3) monolayers (ML) of adsorption corresponding to the ppb level sensor with an activation time of 1 s. American Chemical Society 2020-10-22 /pmc/articles/PMC7643195/ /pubmed/33163793 http://dx.doi.org/10.1021/acsomega.0c03741 Text en © 2020 American Chemical Society This is an open access article published under a Creative Commons Non-Commercial No Derivative Works (CC-BY-NC-ND) Attribution License (http://pubs.acs.org/page/policy/authorchoice_ccbyncnd_termsofuse.html) , which permits copying and redistribution of the article, and creation of adaptations, all for non-commercial purposes.
spellingShingle Trung, Nguyen Tat
Hossain, Mohammad Ikram
Alam, Md Iftekharul
Ando, Atsushi
Kitakami, Osamu
Kikuchi, Nobuaki
Takaoka, Tsuyoshi
Sainoo, Yasuyuki
Arafune, Ryuichi
Komeda, Tadahiro
In Situ Study of Molecular Doping of Chlorine on MoS(2) Field Effect Transistor Device in Ultrahigh Vacuum Conditions
title In Situ Study of Molecular Doping of Chlorine on MoS(2) Field Effect Transistor Device in Ultrahigh Vacuum Conditions
title_full In Situ Study of Molecular Doping of Chlorine on MoS(2) Field Effect Transistor Device in Ultrahigh Vacuum Conditions
title_fullStr In Situ Study of Molecular Doping of Chlorine on MoS(2) Field Effect Transistor Device in Ultrahigh Vacuum Conditions
title_full_unstemmed In Situ Study of Molecular Doping of Chlorine on MoS(2) Field Effect Transistor Device in Ultrahigh Vacuum Conditions
title_short In Situ Study of Molecular Doping of Chlorine on MoS(2) Field Effect Transistor Device in Ultrahigh Vacuum Conditions
title_sort in situ study of molecular doping of chlorine on mos(2) field effect transistor device in ultrahigh vacuum conditions
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7643195/
https://www.ncbi.nlm.nih.gov/pubmed/33163793
http://dx.doi.org/10.1021/acsomega.0c03741
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