Robust and Latch-Up-Immune LVTSCR Device with an Embedded PMOSFET for ESD Protection in a 28-nm CMOS Process

Low-voltage-triggered silicon-controlled rectifier (LVTSCR) is expected to provide an electrostatic discharge (ESD) protection for a low-voltage integrated circuit. However, it is normally vulnerable to the latch-up effect due to its extremely low holding voltage. In this paper, a novel LVTSCR embed...

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Detalles Bibliográficos
Autores principales: Chen, Ruibo, Liu, Hongxia, Song, Wenqiang, Du, Feibo, Zhang, Hao, Zhang, Jikai, Liu, Zhiwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7658273/
https://www.ncbi.nlm.nih.gov/pubmed/33175243
http://dx.doi.org/10.1186/s11671-020-03437-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7658273/
https://www.ncbi.nlm.nih.gov/pubmed/33175243
http://dx.doi.org/10.1186/s11671-020-03437-3

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