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Robust and Latch-Up-Immune LVTSCR Device with an Embedded PMOSFET for ESD Protection in a 28-nm CMOS Process
Low-voltage-triggered silicon-controlled rectifier (LVTSCR) is expected to provide an electrostatic discharge (ESD) protection for a low-voltage integrated circuit. However, it is normally vulnerable to the latch-up effect due to its extremely low holding voltage. In this paper, a novel LVTSCR embed...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7658273/ https://www.ncbi.nlm.nih.gov/pubmed/33175243 http://dx.doi.org/10.1186/s11671-020-03437-3 |