Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching

This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology. The device consists of aluminum square plates attached together by means of tungsten vias integrated into the back end of line (BEOL) of t...

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Detalles Bibliográficos
Autores principales: Mata-Hernandez, Diana, Fernández, Daniel, Banerji, Saoni, Madrenas, Jordi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Letter
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7660321/
https://www.ncbi.nlm.nih.gov/pubmed/33114151
http://dx.doi.org/10.3390/s20216037

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7660321/
https://www.ncbi.nlm.nih.gov/pubmed/33114151
http://dx.doi.org/10.3390/s20216037

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